RGPV 3rd Sem CBCS EI Syllabus | RGPV Electronics And Instrumentation Engg Syllabus CBCS 2nd Year-->
RGPV 3rd Sem Electronics & Instrumentation Engineering Subjects
RGPV 4th Sem Electronics & Instrumentation Engineering Subjects
· Mathematics-III (Departmental Mathematics)
· Signals and Systems
· Electronic Devices & Circuits
· Fundamentals of Measurement
· Circuits analysis & synthesis
· Communication Skills
· Idea Generation
· Learning Through Experts
· Data Structures
· EAS System Engineering
· DC Analog Electronics
· DC Sensors and Transducers
· DC Digital Electronics
· EAS Material Science
· EAS Programming Tools
· HU NSS/NCC
RGPV 2nd year CBCS Electronics and Instrumentation Engineering Syllabus (3rd Sem Syllabus)
Now RGPV Bhopal announced the 2nd year 3rd sem syllabus of Electronics And Instrumentation branch; it contain above mentioned subjects. The RGPV also give the detail of 3rd sem CBCS EI practical list. If you want to download RGPV 3rd sem CBCS Practical list of EI branch; please follow below links:
RGPV CBCS 3rd Sem Signals and Systems SyllabusUnit. 1 CLASSIFICATION OF SIGNALS & SYSTEMS
Continuous-Time and Discrete-Time Signals- Unit Impulse, Unit Step, Ramp, Exponential & Sinusoidal Signals. Periodic & aperiodic signals, Deterministic and random signals, Energy and Power signals.
Continuous-Time and Discrete-Time Systems. Classification, Static & dynamic, Linear and non-linear, Causal and non-causal, Time variant and invariant, Continuous-Time LTI Systems: The Convolution Integral.
Discrete-Time LTI Systems: The Convolution Sum.
Unit. 2 ANALYSIS OF CONTINUOUS & DISCRETE TIME SIGNALS
Fourier series Representation of Continuous-Time Periodic Signals, Properties, Continuous-Time Fourier Transform (CTFT), The Fourier Transform for Periodic Signals, Properties of the CTFT, Duality, Sinc and signum function, Sampling Theorem, Aliasing, Discrete Time Fourier series Properties, Discrete-Time Fourier Transform (DTFT). Properties of the DTFT. Parseval's Theorem, Central ordinate theorem.
Unit. 3 LAPLACE TRANSFORM
Definition, Region of Convergence, Inverse Laplace Transform, Properties, Analysis and Characterization ofLTI Systems Using the Laplace Transform, The Unilateral Laplace Transform, Casualty and stability in continuous time LTI system, System realization through Block-diagram representation and system interconnection, State variable analysis, State space Models, Solution of State equation, The state-transition matrix, Concept of Controllability and Observability.
Unit. 4 Z-TRANSFORM
Definition, Region of Convergence. Inverse z-Transform. Properties, Some Common z-Transform Pairs.
Analysis and Characterization of LTI Systems Using z-Transforms. System Function Algebra and Block Diagram Representations. The Unilateral z-Transforms. Casualty and stability in continuous time LTI system, Group delay, Phase delay.
Unit. 5 RANDOM VARIABLES & RANDOM PROCESS
Sets and Sample Spaces Random Variables Continuous and Discrete, Cumulative distribution Function (CDF), Probability Density Function (PDF), Expectation and Moments, Types of Random Processes, Ergodicity, Auto-correlation Function (ACF) & Cross correlation Function (CCF), Power Spectral Density, Wiener– Khinchin–Einstein theorem, Central limit theorem, Transmission of a random process through a Linear Filter.
Central Limit Theorem, Mixing of a Random process with sinusoidal process.
RGPV CBCS 3rd Sem Electronic Devices and Circuits SyllabusUnit. 1 Basics of semiconductor devices
Intrinsic & Extrinsic semiconductors, Mobility and Conductivity, Hall effect, E-K diagram, Current Densities, Diffusion, Generation & Recombination of electron-hole pair, Continuity equation, Conductivity Modulation, Mass-action Law, Injected Minority Carrier Charge, p-n junction diode, V-I characteristics & their temperature dependence, Diode resistances, and capacitance, Breakdown diodes, Photodiodes, LEDs,
Varacter Diode, Schottky Diode, Tunnel Diode,
Unit. 2 Diode and Transistor circuits
Clippers, Clampers, Clamping theorem, Rectifiers & filters, Model of diode, Bipolar junction transistor (BJT), Potential profile in PNP & NPN structures, Current components, Configurations, Early Effect, Eber’s Moll Model, Transistor as an amplifier, Biasing & Thermal Stabilization, The Q point stability, Stabilization against variation of ICO, VBE & ß, Bias compensation, Millers theorem and its dual, Thermal runway, Schottky and Photo-transistors.
Unit. 3 BJT Modelling and Introduction to FET
Hybrid model, Simplified model, Common emitter with emitter resistor, high i/p impedance circuits, Emitter follower, comparison of CB, CE, CC configuration, Darlington pair, Bootstrapping, Cascode Amplifier, Field effect transistors(FET), JFET, pinch off, V-I Characteristics, Small signal model, MOSFET, Derivation for drain current ID for E-MOSFET, Threshold voltage and body effect, CS & CD amplifiers, Biasing techniques, FET as VDR,
Unit. 4 MOS Structure and Short channel effect theory
Band diagram for a MOS junction under accumulation, Depletion & inversion, MOS capacitor, C-V of an ideal & non- ideal capacitors, Characterization of MOS capacitors, MOS field effect transistor (MOSFET) V-I characteristics in three regions of operation & equivalent circuit. Short channel MOSFET: Effect of scaling of MOSFET, Short & narrow channel effects on V-I characteristics, Hot electron effect in MOSFET.
Unit. 5 Silicon Processing and Introduction to Power electronic devices
Silicon Planar technology, Oxidation, Diffusion, Metallization, Ion-Implantation & chemical vapor deposition, Lithographic process, Typical Bipolar & MOS IC process sequence, Silicon controlled Rectifier, Holding and Latching current, di/dt triggering and other triggering methods & Unijunction Transistor (UJT) and UJT relaxation oscillator.
RGPV CBCS 3rd Sem Fundamentals of Measurement SyllabusUnit-1.Fundamentals of measuring instruments: Fundamental methods of measurement, Classification of measuring instruments, Static and Dynamic characteristics, Error Classification and analysis, Standards for displacement, force, time, frequency, temperature and electrical standards. IEEE standards.
Unit-2. Cathode Ray Oscilloscope: construction and operation, measurement of amplitude, phase and frequency with cro, lissajous patterns. Fundamentals of EMI, RF measurements techniques, Network analyzers, Noise reduction techniques, compatibility of measuring instruments.
Unit-3. Analog Instruments: Analog indicating type instruments based on various operating principles, ammeters, voltmeters, ohmmeters. Extension of instrument range, instrument transformers.
Unit-4. Measurement of low resistances, voltage, current, phase, frequency, power and energy, Q factor, resistance, noise etc; compensation, calibration and testing of measuring instruments.
Unit-5. A.C. Bridges: A.C bridges for measurement of inductance, capacitance, Q factor and loss angle, universal impedance bridge. Design aspects. Design aspects of digital Multimeter and panel meters, Distortion and spectrum analysis.
RGPV CBCS 3rd Sem Circuits Analysis and Synthesis SyllabusUnit. 1 Basics of electrical Networks
Network elements: E.M.F., Potential and Potential difference, Current and Current density, Ideal and practical Voltage and Current Source and their characteristics, source transformations, Various network elements and their behavior, Power and energy relations, Kirchhoff’s laws, Current and voltage division, Nodal and Mesh analysis, Graph theory, Incidence and Reduced incidence matrix, isomorphic graph, Tie-set and Cut-set matrix.
Unit. 2 Network Theorems & Filter circuits
Superposition, Reciprocity, Thévenin’s, Norton’s and Maximum power transfer, Compensation, Tellenge’s. ?-Y transformation, Polyphase analysis, Power relation in AC Circuits, Power factor, Apparent and reactivepower, Power triangle, Sinusoidal steady state analysis of RLC circuits, Passive filters, High pass and Low pass, Band pass & Band stop filter, Prototype & m-derived filters, Fundaments of active filters.
Unit. 3 Analysis of Coupled Circuits & Resonance
Magnetic coupling, Study of ideal transformer, Time domain, natural response and forced response, Dotconvention, electrical equivalent of magnetically coupled circuits, single and double tuned coupled circuits, Resonance: Series and parallel resonance, bandwidth &selectivity, Q-factor, Effect of resistance on frequency response curve, Parallel resonance of RLC circuit.
Unit. 4 Two port network analysis & Network Functions
Various network parameters: Z, Y, Hybrid, ABCD & their relationships condition of reciprocity andsymmetry, Input and output impedances, Equivalent ? and ? sections representation in parameter form,Ladder network, Network Function, Driving point and transfer impedances, Interpretation of poles and zeros, effect of their location in complex plane. Routh-Hurwitz Criterion of stability.
Unit. 5 Time Domain Analysis of Circuits and Concept of Network Synthesis
Transient and steady state response of electrical circuits, Initial conditions & final condition, step and impulse response, Network Synthesis: Hurwitz polynomial, Positive Real (PR) function, Properties of LC, RC, RLimmittances, Foster realization of LC circuits, Ladder development and Cauer forms, Significance of elements in Foster & Cauer forms, Determination of end elements, Applicability of Foster and Cauer forms.